Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale

Kneier, Fabian; Geldhauser, Tobias; Leiderer, Paul; Boneberg, Johannes

Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale

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Datum

2011

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Applied Physics A. 2011, 105(1), pp. 25-30. ISSN 0947-8396. eISSN 1432-0630. Available under: doi: 10.1007/s00339-011-6528-4

Zusammenfassung

The surface displacement of 111-silicon wafers of 0.675 mm and 3.05 mm thickness, respectively, during intense ns laser irradiation is determined on the nm-vertical and ns-time scale using an optimized Michelson interferometer. The surface dynamics is observed below as well as above the melting threshold. We show that the obtained surface expansion below the melting threshold is in good agreement with theoretical heat transfer calculations. Additionally, thickness-dependent bending in the samples is illustrated and the acoustic reflections from the backside of the sample are observed. Maximum thermal displacement at the first expansion plateau is around 6 nm before melting occurs. We show that qualitative agreement between experimental results and simulation above the melting threshold can be established for the first time by taking the phase shift change in the reflection for molten silicon into account.

Fachgebiet (DDC)

530 Physik

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KNEIER, Fabian, Tobias GELDHAUSER, Paul LEIDERER, Johannes BONEBERG, 2011. Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale. In: Applied Physics A. 2011, 105(1), pp. 25-30. ISSN 0947-8396. eISSN 1432-0630. Available under: doi: 10.1007/s00339-011-6528-4

BibTex

@article{Kneier2011Measu-22037,
  year={2011},
  doi={10.1007/s00339-011-6528-4},
  title={Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale},
  number={1},
  volume={105},
  issn={0947-8396},
  journal={Applied Physics A},
  pages={25--30},
  author={Kneier, Fabian and Geldhauser, Tobias and Leiderer, Paul and Boneberg, Johannes}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/22037">
    <dc:language>eng</dc:language>
    <dc:contributor>Kneier, Fabian</dc:contributor>
    <dcterms:title>Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale</dcterms:title>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/22037"/>
    <dcterms:abstract xml:lang="eng">The surface displacement of 111-silicon wafers of 0.675 mm and 3.05 mm thickness, respectively, during intense ns laser irradiation is determined on the nm-vertical and ns-time scale using an optimized Michelson interferometer. The surface dynamics is observed below as well as above the melting threshold. We show that the obtained surface expansion below the melting threshold is in good agreement with theoretical heat transfer calculations. Additionally, thickness-dependent bending in the samples is illustrated and the acoustic reflections from the backside of the sample are observed. Maximum thermal displacement at the first expansion plateau is around 6 nm before melting occurs. We show that qualitative agreement between experimental results and simulation above the melting threshold can be established for the first time by taking the phase shift change in the reflection for molten silicon into account.</dcterms:abstract>
    <dcterms:bibliographicCitation>Applied Physics A ; 105 (2011), 1. - S. 25-30</dcterms:bibliographicCitation>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dc:contributor>Geldhauser, Tobias</dc:contributor>
    <dc:creator>Kneier, Fabian</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Boneberg, Johannes</dc:contributor>
    <dcterms:issued>2011</dcterms:issued>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-02-21T11:21:09Z</dcterms:available>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-02-21T11:21:09Z</dc:date>
    <dc:creator>Geldhauser, Tobias</dc:creator>
    <dc:creator>Boneberg, Johannes</dc:creator>
  </rdf:Description>
</rdf:RDF>

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