Publikation:

Growth and electronic structure of graphene on semiconducting Ge(110)

Vorschaubild

Dateien

Tesch_0-414994.pdf
Tesch_0-414994.pdfGröße: 517.75 KBDownloads: 197

Datum

2017

Autor:innen

Voloshina, Elena

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

URI (zitierfähiger Link)
http://nbn-resolving.de/urn:nbn:de:bsz:352-0-414994
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.carbon.2017.06.079
ArXiv-ID
http://arxiv.org/abs/1705.07699

Internationale Patentnummer

Link zur Lizenz
Urheberrechtlich geschützt

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Green

Sammlungen

Physik: Publikationen
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Carbon. 2017, 122, pp. 428-433. ISSN 0008-6223. eISSN 1873-3891. Available under: doi: 10.1016/j.carbon.2017.06.079

Zusammenfassung

The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Verknüpfte Datensätze

Zitieren

ISO 690TESCH, Julia, Elena VOLOSHINA, Mikhail FONIN, Yuriy S. DEDKOV, 2017. Growth and electronic structure of graphene on semiconducting Ge(110). In: Carbon. 2017, 122, pp. 428-433. ISSN 0008-6223. eISSN 1873-3891. Available under: doi: 10.1016/j.carbon.2017.06.079
BibTex
@article{Tesch2017-05-22T12:54:36ZGrowt-39570,
  year={2017},
  doi={10.1016/j.carbon.2017.06.079},
  title={Growth and electronic structure of graphene on semiconducting Ge(110)},
  volume={122},
  issn={0008-6223},
  journal={Carbon},
  pages={428--433},
  author={Tesch, Julia and Voloshina, Elena and Fonin, Mikhail and Dedkov, Yuriy S.}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/39570">
    <dc:creator>Tesch, Julia</dc:creator>
    <dc:creator>Voloshina, Elena</dc:creator>
    <dc:contributor>Fonin, Mikhail</dc:contributor>
    <dcterms:issued>2017-05-22T12:54:36Z</dcterms:issued>
    <dcterms:abstract xml:lang="eng">The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.</dcterms:abstract>
    <dc:rights>terms-of-use</dc:rights>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Dedkov, Yuriy S.</dc:contributor>
    <dc:creator>Dedkov, Yuriy S.</dc:creator>
    <dcterms:title>Growth and electronic structure of graphene on semiconducting Ge(110)</dcterms:title>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Fonin, Mikhail</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-07-13T09:46:53Z</dc:date>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/39570/1/Tesch_0-414994.pdf"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/39570"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/39570/1/Tesch_0-414994.pdf"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-07-13T09:46:53Z</dcterms:available>
    <dc:contributor>Tesch, Julia</dc:contributor>
    <dc:contributor>Voloshina, Elena</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:language>eng</dc:language>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen