Publikation: Recombination at Lomer Dislocations in Multicrystalline Silicon for Solar Cells
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2016
Autor:innen
Bauer, Jan
Hähnel, Angelika
Werner, Peter
Zakharov, Nikolai
Blumtritt, Horst
Breitenstein, Otwin
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IEEE Journal of Photovoltaics. 2016, 6(1), pp. 100-110. eISSN 2156-3381. Available under: doi: 10.1109/JPHOTOV.2015.2494680
Zusammenfassung
Lomer dislocations at small-angle grain boundaries in multicrystalline silicon solar cells have been identified as responsible for the dominating inherent dark current losses. Resulting efficiency losses have been quantified by dark lock-in thermography to be locally up to several percent absolute, reducing the maximum power of the cells. By electron beam induced current measurements and scanning transmission electron microscopy investigations, it is revealed that the strengths of the dark current losses depend on the density of Lomer dislocations at the small-angle grain boundaries.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Defects, efficiency losses, Lomer dislocations, mc-Si solar cells, recombination
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BAUER, Jan, Angelika HÄHNEL, Peter WERNER, Nikolai ZAKHAROV, Horst BLUMTRITT, Annika ZUSCHLAG, Otwin BREITENSTEIN, 2016. Recombination at Lomer Dislocations in Multicrystalline Silicon for Solar Cells. In: IEEE Journal of Photovoltaics. 2016, 6(1), pp. 100-110. eISSN 2156-3381. Available under: doi: 10.1109/JPHOTOV.2015.2494680BibTex
@article{Bauer2016Recom-33277,
year={2016},
doi={10.1109/JPHOTOV.2015.2494680},
title={Recombination at Lomer Dislocations in Multicrystalline Silicon for Solar Cells},
number={1},
volume={6},
journal={IEEE Journal of Photovoltaics},
pages={100--110},
author={Bauer, Jan and Hähnel, Angelika and Werner, Peter and Zakharov, Nikolai and Blumtritt, Horst and Zuschlag, Annika and Breitenstein, Otwin}
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<dcterms:abstract xml:lang="eng">Lomer dislocations at small-angle grain boundaries in multicrystalline silicon solar cells have been identified as responsible for the dominating inherent dark current losses. Resulting efficiency losses have been quantified by dark lock-in thermography to be locally up to several percent absolute, reducing the maximum power of the cells. By electron beam induced current measurements and scanning transmission electron microscopy investigations, it is revealed that the strengths of the dark current losses depend on the density of Lomer dislocations at the small-angle grain boundaries.</dcterms:abstract>
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