Multilayer MoS₂ Schottky Barrier Field Effect Transistor

Abstract

The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB-FETs). Following the trend, this study presents two-dimensional MoS₂ SB-FETs, configured with back-gate and van der Pauw contacts, and analyses their electrical behaviour through output and transfer characteristics. The consequences that local inhomogeneities due to fabrication processes have on Schottky barriers height and electrical behaviour of the device are underlined. A hierarchy of the Schottky barrier heights at the contacts is established, and a band model is developed to elucidate the underlying conduction mechanisms. This model combines thermionic emission and tunnelling to explain the operation of the studied MoS₂ devices and can be broadly applied to other SB-FETs.