On the Role of AlOx Thickness in AlOx/SiNy : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si

Schmid, Andreas; Fischer, Christian; Skorka, Daniel; Herguth, Axel; Winter, Clemens; Zuschlag, Annika; Hahn, Giso

On the Role of AlO_x Thickness in AlO_x/SiN_y : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si

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Schmid_2-479vfjor46648.pdf(708.04 KB)

Datum

2021

Publikationstyp

Zeitschriftenartikel

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Published

Erschienen in

IEEE Journal of Photovoltaics ; 11 (2021), 4. - S. 967-973. - IEEE. - ISSN 2156-3403. - eISSN 2156-3403

Zusammenfassung

Light- and elevated temperature-induced degradation (LeTID) is assumed to be triggered by the hydrogen content in the crystalline silicon bulk. This article investigates differently thick atomic layer-deposited aluminum oxide (AlO _x ) layers acting as diffusion barrier for hydrogen originating from a hydrogen-rich silicon nitride (SiN _y :H) layer. We demonstrate that the extent of LeTID can be significantly reduced by adjusting the AlO _x layer thickness up to 25 nm. To directly measure the diffusing species, a deuterium-rich SiN _y :D layer is deposited and the deuterium content is measured in an amorphous Si layer at the back side of the wafer via secondary ion mass spectrometry. Thus, a diffusion length of deuterium in the AlO _x layer of (3.8±1.6) nm is determined at a firing temperature of (743±2)∘C . These results are not only a contribution to determine the LeTID formation dynamics, but also can be used to control LeTID in silicon wafers and solar cells.

Fachgebiet (DDC)

530 Physik

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ISO 690

SCHMID, Andreas, Christian FISCHER, Daniel SKORKA, Axel HERGUTH, Clemens WINTER, Annika ZUSCHLAG, Giso HAHN, 2021. On the Role of AlO_x Thickness in AlO_x/SiN_y : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si. In: IEEE Journal of Photovoltaics. IEEE. 11(4), pp. 967-973. ISSN 2156-3403. eISSN 2156-3403. Available under: doi: 10.1109/JPHOTOV.2021.3075850

BibTex

@article{Schmid2021Thick-54384,
  year={2021},
  doi={10.1109/JPHOTOV.2021.3075850},
  title={On the Role of AlO<sub>x</sub> Thickness in AlO<sub>x</sub>/SiN<sub>y</sub> : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si},
  number={4},
  volume={11},
  issn={2156-3403},
  journal={IEEE Journal of Photovoltaics},
  pages={967--973},
  author={Schmid, Andreas and Fischer, Christian and Skorka, Daniel and Herguth, Axel and Winter, Clemens and Zuschlag, Annika and Hahn, Giso}
}

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