High-intensity terahertz radiation from a microstructured large-area photoconductor

Dreyhaupt, Andre; Winnerl, Stephan; Dekorsy, Thomas; Helm, Manfred

High-intensity terahertz radiation from a microstructured large-area photoconductor

Dateien

High_intensity_terahertz_radiation_from_a_microstructured_large_area_photoconductor.pdfGröße: 145.62 KBDownloads: 1036

Datum

2005

Autor:innen

Dreyhaupt, Andre

Winnerl, Stephan

Dekorsy, Thomas

Helm, Manfred

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Applied Physics Letters. 2005, 86, 121114. Available under: doi: 10.1063/1.1891304

Zusammenfassung

We present a planar large-area photoconducting emitter for impulsive generation of terahertz (THz) radiation. The device consists of an interdigitated electrode metal-semiconductor-metal (MSM) structure which is masked by a second metallization layer isolated from the MSM electrodes. The second layer blocks optical excitation in every second period of the MSM finger structure. Hence charge carriers are excited only in those periods of the MSM structure which exhibit a unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to THz electric field amplitudes up to 85 V/cm when excited with fs optical pulses from a Ti:sapphire oscillator with an average power of 100 mW at a bias voltage of 65 V applied to the MSM structure. The proposed device structure has a large potential for large-area high-power THz emitters.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

DREYHAUPT, Andre, Stephan WINNERL, Thomas DEKORSY, Manfred HELM, 2005. High-intensity terahertz radiation from a microstructured large-area photoconductor. In: Applied Physics Letters. 2005, 86, 121114. Available under: doi: 10.1063/1.1891304

BibTex

@article{Dreyhaupt2005Highi-9314,
  year={2005},
  doi={10.1063/1.1891304},
  title={High-intensity terahertz radiation from a microstructured large-area photoconductor},
  volume={86},
  journal={Applied Physics Letters},
  author={Dreyhaupt, Andre and Winnerl, Stephan and Dekorsy, Thomas and Helm, Manfred},
  note={Article Number: 121114}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9314">
    <dcterms:issued>2005</dcterms:issued>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9314"/>
    <dcterms:abstract xml:lang="eng">We present a planar large-area photoconducting emitter for impulsive generation of terahertz (THz) radiation. The device consists of an interdigitated electrode metal-semiconductor-metal (MSM) structure which is masked by a second metallization layer isolated from the MSM electrodes. The second layer blocks optical excitation in every second period of the MSM finger structure. Hence charge carriers are excited only in those periods of the MSM structure which exhibit a unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to THz electric field amplitudes up to 85 V/cm when excited with fs optical pulses from a Ti:sapphire oscillator with an average power of 100 mW at a bias voltage of 65 V applied to the MSM structure. The proposed device structure has a large potential for large-area high-power THz emitters.</dcterms:abstract>
    <dc:creator>Dekorsy, Thomas</dc:creator>
    <dc:contributor>Dreyhaupt, Andre</dc:contributor>
    <dcterms:title>High-intensity terahertz radiation from a microstructured large-area photoconductor</dcterms:title>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:25Z</dc:date>
    <dc:format>application/pdf</dc:format>
    <dc:creator>Dreyhaupt, Andre</dc:creator>
    <dc:language>eng</dc:language>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:creator>Winnerl, Stephan</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 86 (2005), 121114</dcterms:bibliographicCitation>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Winnerl, Stephan</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:25Z</dcterms:available>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9314/1/High_intensity_terahertz_radiation_from_a_microstructured_large_area_photoconductor.pdf"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9314/1/High_intensity_terahertz_radiation_from_a_microstructured_large_area_photoconductor.pdf"/>
    <dc:creator>Helm, Manfred</dc:creator>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dc:contributor>Helm, Manfred</dc:contributor>
  </rdf:Description>
</rdf:RDF>

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