Publikation: On the stability of dielectric passivation layers under illumination and temperature treatment
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2016
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Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 523-526. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2DO.3.4
Zusammenfassung
Different dielectric layers were deposited onto boron doped floatzone silicon wafers and the stability of the effective lifetime was investigated at elevated temperatures ranging from 75°C to 250°C with and without illumination. It was found that samples fired in a belt furnace show an instable behavior on a timescale of minutes to months. The short term behavior of a sample is strongly influenced by the peak firing temperature whereas the long term behavior appears to be less influenced by this parameter. Different chemical cleaning procedures during sample preparation show no significant influence on stability. Via corona charging, the changes at 250°C in darkness could be associated with changes in chemical passivation quality. It could be shown that a non-fired sample shows a similar, but less pronounced instability whereas an annealed sample is stable under the given treatment conditions.
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Fachgebiet (DDC)
530 Physik
Schlagwörter
Passivation, Stability, Degradation, Silicon-Nitride, Lifetime
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32nd European Photovoltaic Solar Energy Conference and Exhibition, 20. Juni 2016 - 24. Juni 2016, Munich
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SPERBER, David, Florian FURTWÄNGLER, Axel HERGUTH, Giso HAHN, 2016. On the stability of dielectric passivation layers under illumination and temperature treatment. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, 20. Juni 2016 - 24. Juni 2016. In: Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 523-526. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2DO.3.4BibTex
@inproceedings{Sperber2016stabi-36375,
year={2016},
doi={10.4229/EUPVSEC20162016-2DO.3.4},
title={On the stability of dielectric passivation layers under illumination and temperature treatment},
isbn={3-936338-41-8},
publisher={WIP},
address={München},
booktitle={Proceedings of 32nd EU PVSEC},
pages={523--526},
author={Sperber, David and Furtwängler, Florian and Herguth, Axel and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">Different dielectric layers were deposited onto boron doped floatzone silicon wafers and the stability of the effective lifetime was investigated at elevated temperatures ranging from 75°C to 250°C with and without illumination. It was found that samples fired in a belt furnace show an instable behavior on a timescale of minutes to months. The short term behavior of a sample is strongly influenced by the peak firing temperature whereas the long term behavior appears to be less influenced by this parameter. Different chemical cleaning procedures during sample preparation show no significant influence on stability. Via corona charging, the changes at 250°C in darkness could be associated with changes in chemical passivation quality. It could be shown that a non-fired sample shows a similar, but less pronounced instability whereas an annealed sample is stable under the given treatment conditions.</dcterms:abstract>
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