Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells

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2009
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Proceedings of the 24th European Photovoltaic Solar Energy Conference. - Munich, Germany : WIP-Renewable Energies, 2009. - pp. 2012-2014. - ISBN 3-936338-25-6
Abstract
This contribution targets on the stability of screen printed silver front contacts on n-type emitters of crystalline silicon solar cells during thermal treatment steps in the range of 200-300°C which could be of importance for e.g. some dielectric layers or Regeneration. As measurements of the contact resistance taken by TLM technique reveal, the contact resistance may seriously increase within the thermal treatment steps giving rise to a significant degradation of the fill factor of the solar cell. Furthermore it is found that the TLM technique itself has an influence on the measurements.
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530 Physics
Keywords
Front contact,Thermal,Degradation
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24th European Photovoltaic Solar Energy Conference, Sep 21, 2009 - Sep 25, 2009, Hamburg
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Cite This
ISO 690HERGUTH, Axel, Giso HAHN, 2009. Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells. 24th European Photovoltaic Solar Energy Conference. Hamburg, Sep 21, 2009 - Sep 25, 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany:WIP-Renewable Energies, pp. 2012-2014. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2DV.1.7
BibTex
@inproceedings{Herguth2009Tempe-946,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2DV.1.7},
  title={Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={2012--2014},
  author={Herguth, Axel and Hahn, Giso}
}
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