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Quantification of Iron in Boron-Doped Silicon Solar Cells From Open Circuit Voltage Measurements

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2022

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https://doi.org/10.1109/JPHOTOV.2022.3168134
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IEEE Journal of Photovoltaics. IEEE. 2022, 12(4), pp. 937-947. ISSN 2156-3381. eISSN 2156-3403. Available under: doi: 10.1109/JPHOTOV.2022.3168134

Zusammenfassung

Iron is one of the most commonly encountered contaminants in crystalline silicon. The peculiarity of interstitial iron to form iron-boron pairs under certain circumstances reveals its presence because of different electrical activity of interstitial and paired iron, and allows the quantification of the contamination level. In this article, it is shown by means of simulations how the iron contamination level in solar cells can be estimated from changes in open circuit voltage. It is further elaborated how measurements at different illumination intensities can be used to determine the contamination level more accurately. Furthermore, the impact of various error sources is analyzed.

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ISO 690HERGUTH, Axel, 2022. Quantification of Iron in Boron-Doped Silicon Solar Cells From Open Circuit Voltage Measurements. In: IEEE Journal of Photovoltaics. IEEE. 2022, 12(4), pp. 937-947. ISSN 2156-3381. eISSN 2156-3403. Available under: doi: 10.1109/JPHOTOV.2022.3168134
BibTex
@article{Herguth2022Quant-57568,
  year={2022},
  doi={10.1109/JPHOTOV.2022.3168134},
  title={Quantification of Iron in Boron-Doped Silicon Solar Cells From Open Circuit Voltage Measurements},
  number={4},
  volume={12},
  issn={2156-3381},
  journal={IEEE Journal of Photovoltaics},
  pages={937--947},
  author={Herguth, Axel}
}
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