@article{Herguth2010Kinet-13341,
  year={2010},
  doi={10.1063/1.3517155},
  title={Kinetics of the boron-oxygen related defect in theory and experiment},
  number={11},
  volume={108},
  journal={Journal of Applied Physics},
  author={Herguth, Axel and Hahn, Giso},
  note={Article Number: 114509}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/13341">
    <dcterms:issued>2010</dcterms:issued>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/13341/1/JApplPhys_108_114509.pdf"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-05-18T06:07:23Z</dc:date>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/13341"/>
    <dcterms:title>Kinetics of the boron-oxygen related defect in theory and experiment</dcterms:title>
    <dc:creator>Herguth, Axel</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-05-18T06:07:23Z</dcterms:available>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/13341/1/JApplPhys_108_114509.pdf"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:abstract xml:lang="eng">The formation of boron-oxygen complexes in boron-doped crystalline silicon can lead to a severe reduction in the minority charge carrier lifetime. This strongly influences, e.g., solar cell efficiencies if the material is used for photovoltaic application. Recent investigations have shown that a recovery of the carrier lifetime can be achieved by a subsequent thermally enhanced reaction induced by charge carriers. A model of the reaction dynamics of the boron-oxygen complex by means of rate equations is presented in this paper. Following a mathematical description of the reactions involved, the consequences based on the calculations are presented and allow a prediction of the observable electrical parameters. The fundamental agreement with measured data is proven experimentally for different phenomena.</dcterms:abstract>
    <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics ; 108 (2010), 11. - 114509</dcterms:bibliographicCitation>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
  </rdf:Description>
</rdf:RDF>