Kinetics of the boron-oxygen related defect in theory and experiment

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Journal of Applied Physics. 2010, 108(11), 114509. Available under: doi: 10.1063/1.3517155
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The formation of boron-oxygen complexes in boron-doped crystalline silicon can lead to a severe reduction in the minority charge carrier lifetime. This strongly influences, e.g., solar cell efficiencies if the material is used for photovoltaic application. Recent investigations have shown that a recovery of the carrier lifetime can be achieved by a subsequent thermally enhanced reaction induced by charge carriers. A model of the reaction dynamics of the boron-oxygen complex by means of rate equations is presented in this paper. Following a mathematical description of the reactions involved, the consequences based on the calculations are presented and allow a prediction of the observable electrical parameters. The fundamental agreement with measured data is proven experimentally for different phenomena.

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ISO 690HERGUTH, Axel, Giso HAHN, 2010. Kinetics of the boron-oxygen related defect in theory and experiment. In: Journal of Applied Physics. 2010, 108(11), 114509. Available under: doi: 10.1063/1.3517155
BibTex
@article{Herguth2010Kinet-13341,
  year={2010},
  doi={10.1063/1.3517155},
  title={Kinetics of the boron-oxygen related defect in theory and experiment},
  number={11},
  volume={108},
  journal={Journal of Applied Physics},
  author={Herguth, Axel and Hahn, Giso},
  note={Article Number: 114509}
}
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