Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

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2005
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Vyvenko, Oleg F.
Bazlov, N.V.
Trushin, A.A.
Nadolinski, A.A.
Seibt, M.
Schröter, M.
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Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

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530 Physik
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Hydrogenation, silicon, nickel silicide, precipitates, DLTS
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ISO 690VYVENKO, Oleg F., N.V. BAZLOV, A.A. TRUSHIN, A.A. NADOLINSKI, M. SEIBT, M. SCHRÖTER, Giso HAHN, 2005. Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. In: Solid State Phenomena. 2005, 108-109, pp. 279-284. ISSN 1012-0394. eISSN 1662-9779. Available under: doi: 10.4028/www.scientific.net/SSP.108-109.279
BibTex
@article{Vyvenko2005Impac-32974,
  year={2005},
  doi={10.4028/www.scientific.net/SSP.108-109.279},
  title={Impact of hydrogenation on electrical properties of NiSi<sub>2</sub> precipitates in silicon},
  volume={108-109},
  issn={1012-0394},
  journal={Solid State Phenomena},
  pages={279--284},
  author={Vyvenko, Oleg F. and Bazlov, N.V. and Trushin, A.A. and Nadolinski, A.A. and Seibt, M. and Schröter, M. and Hahn, Giso}
}
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