Control of excitonic absorption by thickness variation in few-layer GaSe
Lade...
Dateien
Datum
2019
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
ArXiv-ID
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Physical Review B. 2019, 100(4), 045404. ISSN 0163-1829. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.100.045404
Zusammenfassung
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
BUDWEG, Arne, Dinesh YADAV, Alexander GRUPP, Alfred LEITENSTORFER, Maxim TRUSHIN, Fabian PAULY, Daniele BRIDA, 2019. Control of excitonic absorption by thickness variation in few-layer GaSe. In: Physical Review B. 2019, 100(4), 045404. ISSN 0163-1829. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.100.045404BibTex
@article{Budweg2019Contr-41924.2,
year={2019},
doi={10.1103/PhysRevB.100.045404},
title={Control of excitonic absorption by thickness variation in few-layer GaSe},
number={4},
volume={100},
issn={0163-1829},
journal={Physical Review B},
author={Budweg, Arne and Yadav, Dinesh and Grupp, Alexander and Leitenstorfer, Alfred and Trushin, Maxim and Pauly, Fabian and Brida, Daniele},
note={Article Number: 045404}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41924.2">
<dc:language>eng</dc:language>
<dc:contributor>Leitenstorfer, Alfred</dc:contributor>
<dc:creator>Trushin, Maxim</dc:creator>
<dc:creator>Grupp, Alexander</dc:creator>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52"/>
<dc:contributor>Yadav, Dinesh</dc:contributor>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41924.2/1/Budweg_2-akf0r9jf8te0.pdf"/>
<dc:creator>Pauly, Fabian</dc:creator>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:contributor>Trushin, Maxim</dc:contributor>
<dc:creator>Leitenstorfer, Alfred</dc:creator>
<bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/41924.2"/>
<dc:contributor>Grupp, Alexander</dc:contributor>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/52"/>
<dcterms:abstract xml:lang="eng">We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.</dcterms:abstract>
<dcterms:issued>2019</dcterms:issued>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41924.2/1/Budweg_2-akf0r9jf8te0.pdf"/>
<dcterms:title>Control of excitonic absorption by thickness variation in few-layer GaSe</dcterms:title>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T12:25:42Z</dc:date>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T12:25:42Z</dcterms:available>
<dc:creator>Brida, Daniele</dc:creator>
<dc:contributor>Brida, Daniele</dc:contributor>
<dc:creator>Budweg, Arne</dc:creator>
<dc:rights>terms-of-use</dc:rights>
<dc:contributor>Pauly, Fabian</dc:contributor>
<dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<dc:contributor>Budweg, Arne</dc:contributor>
<dc:creator>Yadav, Dinesh</dc:creator>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Ja
