Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

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In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor-hydrogen pairs during annealing in the dark at elevated temperatures. In this study the formation of boron-hydrogen (BH) and gallium-hydrogen (GaH) pairs in 1 cm silicon is investigated at temperatures ranging from 140 to 220°C. Acceptor-hydrogen concentrations in the low 1014cm−3 range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20eV, GaH: 1.04eV) while the trial frequency is the same (∼4×108s−1).

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530 Physik
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crystalline silicon, dynamics, boron-hydrogen pairs, gallium-hydrogen pairs
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ISO 690ACKER, Yanik, Jochen SIMON, Axel HERGUTH, 2022. Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 2022, 219(17), 2200142. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202200142
BibTex
@article{Acker2022-09Forma-57866,
  year={2022},
  doi={10.1002/pssa.202200142},
  title={Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing},
  number={17},
  volume={219},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Acker, Yanik and Simon, Jochen and Herguth, Axel},
  note={Article Number: 2200142}
}
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