Scheer, Elke
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In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate
2023-11-21, Zhang, Xubin, Zhao, Zhibin, Zhang, Surong, Adijiang, Adila, Zhao, Tianran, Tan, Min, Zhao, Xueyan, Hu, Qihong, Wang, Maoning, Lee, Takhee, Scheer, Elke, Xiang, Dong
The current densities in nowadays electronic circuitry are close to the electromigration threshold that may result in the fracture of circuits due to electromigration, hampering further miniaturization of integrated chips. Flexible electronic devices, which use a flexible material instead of rigid silicon as a substrate, might be prone to fracture problems also due to obligatory mechanical deformation. However, finding the location of fractured nanogaps and in situ repairing such atomic-scale fractured circuits are currently unavailable. To this end, a method is developed to in situ heal nanogaps as large as 20 nm between metallic electrodes on the polyimide (PI)-covered substrate via voltage sweeping, which is typically employed to generate nanogaps rather than heal nanogaps. The reconnection of nanoelectrodes is realized only when the underneath PI is treated with oxygen plasma etching. Assisted by X-ray photoelectron spectroscopy, it is revealed that inductively coupled O2 plasma etching not only changes the surface topography but also changes the chemical binding structure of PI, which in return can be used to immobilize metal atoms migrating along the PI surface to gradually close the nanogap, providing an in situ self-healing paradigm for repairing the atomic scale fractured circuits.
Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
2023-09-20, Ruf, Leon, Elalaily, Tosson, Puglia, Claudio, Ivanov, Yurii P., Joint, Francois, Berke, Martin, Iorio, Andrea, Makk, Peter, Scheer, Elke, Di Bernardo, Angelo
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metal-oxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
Growth strategy for solution-phase growth of two-dimensional nanomaterials via a unified model
2023-03-30, Chen, Zongkun, Schmid, Ralf, Wang, Xingkun, Fu, Mengqi, Han, Zhongkang, Fan, Qiqi, Scheer, Elke, Huang, Minghua, Nielaba, Peter, Cölfen, Helmut
Two-dimensional (2D) materials prepared by a solution-phase growth route exhibit many unique properties and are promising for use in various fields. However, simple, rational and green fabrication of target materials remains challenging due to the lack of guiding principles. Here we propose a universal qualitative model for 2D materials grown for layered and non-layered crystal structures by a solution-phase growth route; both theoretical simulation and experimental results confirm the model’s validity. This model demonstrates that 2D growth can be controlled by only tuning the reaction concentration and temperature, and has been applied to fabricate more than 30 different 2D nanomaterials in water at room temperature and in the absence of additives. Furthermore, the model shows promise for optimizing the experimental design of numerous other 2D nanomaterials.
In Situ Adjustable Nanogaps and In‐Plane Break Junctions
2023, Zhao, Xueyan, Zhang, Xubin, Yin, Kaikai, Zhang, Surong, Zhao, Zhikai, Tan, Min, Xu, Xiaona, Wang, Maoning, Scheer, Elke, Xiang, Dong
The ability to precisely regulate the size of a nanogap is essential for establishing high-yield molecular junctions, and it is crucial for the control of optical signals in extreme optics. Although remarkable strategies for the fabrication of nanogaps are proposed, wafer-compatible nanogaps with freely adjustable gap sizes are not yet available. Herein, two approaches for constructing in situ adjustable metal gaps are proposed which allow Ångstrom modulation resolution by employing either a lateral expandable piezoelectric sheet or a stretchable membrane. These in situ adjustable nanogaps are further developed into in-plane molecular break junctions, in which the gaps can be repeatedly closed and opened thousands of times with self-assembled molecules. The conductance of the single 1,4-benzenediamine (BDA) and the BDA molecular dimer is successfully determined using the proposed strategy. The measured conductance agreeing well with the data by employing another well-established scanning tunneling microscopy break junction technique provides insight into the formation of molecule dimer via hydrogen bond at single molecule level. The wafer-compatible nanogaps and in-plane dynamical break-junctions provide a potential approach to fabricate highly compacted devices using a single molecule as a building block and supply a promising in-plane technique to address the dynamical properties of single molecules.
Microscopic theory of supercurrent suppression by gate-controlled surface depairing
2023-11-13, Chakraborty, Subrata, Nikolić, Danilo, Cuevas, Juan Carlos, Giazotto, Francesco, Di Bernardo, Angelo, Scheer, Elke, Cuoco, Mario, Belzig, Wolfgang
Recently gate-mediated supercurrent suppression in superconducting nano-bridges has been reported in many experiments. This could be either a direct or an indirect gate effect. The microscopic understanding of this observation is not clear till now. Using the quasiclassical Green's function method, we show that a small concentration of magnetic impurities at the surface of the bridges can significantly help to suppress superconductivity and hence the supercurrent inside the systems while applying a gate field. This is because the gate field can enhance the depairing through the exchange interaction between the magnetic impurities at the surface and the superconductor. We also obtain a \emph{symmetric} suppression of the supercurrent with respect to the gate field, a signature of a direct gate effect. Future experiments can verify our predictions by modifying the surface with magnetic impurities.
Simulating bistable current-induced switching of metallic atomic contacts by electron-vibration scattering
2023-07-20, Ring, Markus, Pauly, Fabian, Nielaba, Peter, Scheer, Elke
We present a microscopic model, describing current-driven switching in metallic atomic-size contacts. Applying a high current through an atomic-size contact creates a strong electronic nonequilibrium that excites vibrational modes by virtue of the electron-vibration coupling. Using density-functional theory (DFT) in combination with the Landauer-Büttiker theory for phase-coherent transport, expressed in terms of nonequilibrium Green's functions (NEGFs), we study the current-induced forces arising from this nonequilibrium and determine those vibrational modes which couple most strongly to the electronic system. For single-atom lead (Pb) contacts we show specific candidates for bistable switches, consisting of two similar atomic configurations with differing electric conductance. We identify vibrational modes that induce a transition between these configurations. Our results reveal a possible origin of bistable switching in atomic-size contacts through excitation of vibrations by inelastic electron scattering and underline the power of the combined DFT-NEGF approach and statistical mechanics analysis of a Langevin equation to overcome the timescale gap between atomic motion and rare switching events, allowing for an efficient exploration of the contacts' configurational phase space.
Nonlinear transport properties of atomic copper point contacts
2023, Strohmeier, Marcel, Kirchberger, Kim, Scheer, Elke
We report studies on the nonlinear electronic transport properties of copper point contacts. Utilizing the mechanically controllable break junction technique, various contact sizes can be realized to study ensemble-averaged differential conductance spectra at low temperatures. We investigate signatures of phonon excitations for contact sizes down to the atomic scale, where conductance fluctuations arise superimposing the phonon signatures. Applying high bias voltages to atomic-size copper contacts reveal additional features caused by atomic rearrangements.
Nonuniform STM Contrast of Self-Assembled Tri-n-octyl-triazatriangulenium Tetrafluoroborate on HOPG
2023-10-03, Snegir, Sergii, Dappe, Yannick J., Sysoiev, Dmytro, Huhn, Thomas, Scheer, Elke
We have assembled 4,8,12-tri-n-octyl-4,8,12-triazatrianguleniumtetrafluoroborate (TATA-BF4) on highly oriented pyrolytic graphite (HOPG) and have studied the structure and tunneling properties of this self-assembled monolayer (SAM) using scanning tunneling microscopy (STM) under ambient conditions. We show that the triazatriangulenium cations TATA+ form hexagonally packed structures driven by the interaction between the aromatic core and the HOPG lattice, as evidenced by density functional theory (DFT) modeling. According to the DFT results, the three alkyl chains of the platform tend to follow the main crystallographic directions of HOPG, leading to a different STM appearance. The STM contrast of the SAM shows that the monolayer is formed by two types of species, namely, TATA+ with BF4– counterions on top and without them. The cationic TATA+ platform gives rise to a seemingly higher appearance than neutral TATA-BF4, in contrast to observations made on metallic substrates. The variation of the STM tunneling parameters does not change the relative difference of contrast, revealing the stability of both species on HOPG. DFT calculations show that TATA-BF4 on HOPG has sufficient binding energy to resist dissociation into TATA+ and BF4–, which might occur under the action of the electric field in the tunneling gap during STM scanning.
Stretch Evolution of Electronic Coupling of the Thiophenyl Anchoring Group with Gold in Mechanically Controllable Break Junctions
2023-06-15, Lokamani, Mani, Kilibarda, Filip, Günther, Florian, Kelling, Jeffrey, Strobel, Alexander, Zahn, Peter, Juckeland, Guido, Gothelf, Kurt V., Scheer, Elke, Erbe, Artur
The current–voltage characteristics of a single-molecule junction are determined by the electronic coupling Γ between the electronic states of the electrodes and the dominant transport channel(s) of the molecule. Γ is profoundly affected by the choice of the anchoring groups and their binding positions on the tip facets and the tip–tip separation. In this work, mechanically controllable break junction experiments on the N,N′-bis(5-ethynylbenzenethiol-salicylidene)ethylenediamine are presented, in particular, the stretch evolution of Γ with increasing tip–tip separation. The stretch evolution of Γ is characterized by recurring local maxima and can be related to the deformation of the molecule and sliding of the anchoring groups above the tip facets and along the tip edges. A dynamic simulation approach is implemented to model the stretch evolution of Γ, which captures the experimentally observed features remarkably well and establishes a link to the microscopic structure of the single-molecule junction.
Quantitative signal extraction in the dynamic range of nanomechanical systems by free and constrained fitting
2023, Yang, Fan, Waitz, Reimar, Fu, Mengqi, Scheer, Elke
We present a free and a constrained fitting procedure for determining the intrinsic response of a nanomechanical systems subject to noise and other environmental influences. We demonstrate that applying the free fitting procedure to the measured frequency response of amorphous silicon nitride (SiN) nanomembranes at varying pressure enables us to disentangle the intrinsic membrane vibration properties from the system response. This approach gives quantitative access to the eigenfrequency, quality factor, coupling strength to the excitation system as well as to system noise. The validity of physical models for quantities such as excitation, fluctuations, and damping can be verified with the help of the constrained fitting procedure that implies additional mathematical relationships between the fit parameters. We verify the performance of the constrained fitting procedure for amorphous SiN membrane resonators tested in various experimental setups.