2017, Sperber, David, Herguth, Axel, Hahn, Giso

The use of different silicon nitride deposition tools is found to change the degree of light induced degradation (LID) of B-doped float-zone silicon after a fast firing step. In addition, a thermally grown SiO2 interlayer further suppresses LID after firing. Possible mechanisms and a potential link to Light and elevated Temperature Induced Degradation (LeTID) are discussed. Furthermore, it is shown that LID is not related to an earlier described class of thermally activated defects in float-zone silicon and that phosphorous gettering does not influence the occurrence of LID in B-doped float-zone silicon significantly.