Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes
| Type of Publication: | Journal article |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-45007 |
| Author: | Sun, Jiaming; Dekorsy, Thomas; Skorupa, Wolfgang; Schmidt, Bernd; Helm, Manfred |
| Year of publication: | 2003 |
| Published in: | Applied Physics Letters ; 83 (2003), 19. - pp. 3885-3887 |
| DOI (citable link): | https://dx.doi.org/10.1063/1.1626809 |
| Summary: |
Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures.
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| Subject (DDC): | 530 Physics |
| Link to License: | Attribution-NonCommercial-NoDerivs 2.0 Generic |
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SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes. In: Applied Physics Letters. 83(19), pp. 3885-3887. Available under: doi: 10.1063/1.1626809
@article{Sun2003Origi-9507, title={Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes}, year={2003}, doi={10.1063/1.1626809}, number={19}, volume={83}, journal={Applied Physics Letters}, pages={3885--3887}, author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred} }
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