Influence of storage time on laser cleaning of SiO2 on Si

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SCHREMS, Gernot, Marie-Pierre DELAMARE, Nikita ARNOLD, Paul LEIDERER, Dieter BÄUERLE, 2003. Influence of storage time on laser cleaning of SiO2 on Si. In: Applied Physics A. 76(5), pp. 847-849. Available under: doi: 10.1007/s00339-002-1761-5

@article{Schrems2003Influ-8981, title={Influence of storage time on laser cleaning of SiO2 on Si}, year={2003}, doi={10.1007/s00339-002-1761-5}, number={5}, volume={76}, journal={Applied Physics A}, pages={847--849}, author={Schrems, Gernot and Delamare, Marie-Pierre and Arnold, Nikita and Leiderer, Paul and Bäuerle, Dieter} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:bibliographicCitation>First publ. in: Applied Physics A 76 (2003), 5, pp. 847-849</dcterms:bibliographicCitation> <dc:format>application/pdf</dc:format> <dspace:isPartOfCollection rdf:resource=""/> <dc:contributor>Schrems, Gernot</dc:contributor> <dcterms:issued>2003</dcterms:issued> <dc:contributor>Delamare, Marie-Pierre</dc:contributor> <dc:creator>Leiderer, Paul</dc:creator> <dcterms:hasPart rdf:resource=""/> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dcterms:isPartOf rdf:resource=""/> <dc:contributor>Arnold, Nikita</dc:contributor> <dc:creator>Delamare, Marie-Pierre</dc:creator> <dcterms:abstract xml:lang="eng">The influence of the 'storage time' Fs on the threshold fluence Jcl and the efficiency in dry laser cleaning is investigated. Fs denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (FFWHM=28 ns). For the 1500-nm silica spheres, Jcl was found to increase from about 65 mJ/cm2 to 125 mJ/cm2 for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h.</dcterms:abstract> <dc:contributor>Bäuerle, Dieter</dc:contributor> <bibo:uri rdf:resource=""/> <dc:creator>Bäuerle, Dieter</dc:creator> <dc:creator>Arnold, Nikita</dc:creator> <dcterms:title>Influence of storage time on laser cleaning of SiO2 on Si</dcterms:title> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:date rdf:datatype="">2011-03-24T17:52:35Z</dc:date> <dspace:hasBitstream rdf:resource=""/> <dc:creator>Schrems, Gernot</dc:creator> <dcterms:available rdf:datatype="">2011-03-24T17:52:35Z</dcterms:available> <dcterms:rights rdf:resource=""/> <dc:contributor>Leiderer, Paul</dc:contributor> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

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