3He impurity effects on the growth kinetics of 4He crystals

Cite This

Files in this item

Checksum: MD5:129f51e6cb5356c7409f8328b1b5970a

SUZUKI, M., M. THIEL, Paul LEIDERER, 1996. 3He impurity effects on the growth kinetics of 4He crystals. In: Czechoslovak Journal of Physics. 46(1, Supplement 1), pp. 459-460. ISSN 0011-4626. eISSN 1572-9486. Available under: doi: 10.1007/BF02569645

@article{Suzuki1996impur-8937, title={3He impurity effects on the growth kinetics of 4He crystals}, year={1996}, doi={10.1007/BF02569645}, number={1, Supplement 1}, volume={46}, issn={0011-4626}, journal={Czechoslovak Journal of Physics}, pages={459--460}, author={Suzuki, M. and Thiel, M. and Leiderer, Paul} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/8937"> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8937/1/185_czechjphys_1996.pdf"/> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:creator>Thiel, M.</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Thiel, M.</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8937/1/185_czechjphys_1996.pdf"/> <dcterms:bibliographicCitation>First publ. in: Czechoslovak Journal of Physics 46 (1996), Supplement S1, pp. 459-460</dcterms:bibliographicCitation> <dc:contributor>Suzuki, M.</dc:contributor> <dc:creator>Leiderer, Paul</dc:creator> <dc:language>eng</dc:language> <dc:creator>Suzuki, M.</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dc:date> <dcterms:abstract xml:lang="eng">We report on the growth kinetics of 4He crystals with a small amount of 3He impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure 4He. We discuss several possible explanations of the present experiment.</dcterms:abstract> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:format>application/pdf</dc:format> <dcterms:title>3He impurity effects on the growth kinetics of 4He crystals</dcterms:title> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dcterms:available> <dcterms:issued>1996</dcterms:issued> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <dc:contributor>Leiderer, Paul</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8937"/> </rdf:Description> </rdf:RDF>

Downloads since Oct 1, 2014 (Information about access statistics)

185_czechjphys_1996.pdf 206

This item appears in the following Collection(s)

Attribution-NonCommercial-NoDerivs 2.0 Generic Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 2.0 Generic

Search KOPS


Browse

My Account