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Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors

Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors

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SORTINO, Luca, Matthew BROOKS, Panaiot G. ZOTEV, Armando GENCO, Javier CAMBIASSO, Sandro MIGNUZZI, Stefan A. MAIER, Guido BURKARD, Riccardo SAPIENZA, Alexander I. TARTAKOVSKII, 2020. Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors. In: ACS Photonics. ACS Publications. 7(9), pp. 2413-2422. eISSN 2330-4022. Available under: doi: 10.1021/acsphotonics.0c00294

@article{Sortino2020-09-16Diele-51061, title={Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors}, year={2020}, doi={10.1021/acsphotonics.0c00294}, number={9}, volume={7}, journal={ACS Photonics}, pages={2413--2422}, author={Sortino, Luca and Brooks, Matthew and Zotev, Panaiot G. and Genco, Armando and Cambiasso, Javier and Mignuzzi, Sandro and Maier, Stefan A. and Burkard, Guido and Sapienza, Riccardo and Tartakovskii, Alexander I.} }

Mignuzzi, Sandro Burkard, Guido Zotev, Panaiot G. Burkard, Guido Genco, Armando Zotev, Panaiot G. 2020-09-28T13:00:43Z 2020-09-28T13:00:43Z Mignuzzi, Sandro Sapienza, Riccardo Sortino, Luca Dielectric Nanoantennas for Strain Engineering in Atomically Thin Two-Dimensional Semiconductors eng Maier, Stefan A. Tartakovskii, Alexander I. Brooks, Matthew 2020-09-16 Sortino, Luca Sapienza, Riccardo Cambiasso, Javier Maier, Stefan A. Brooks, Matthew Genco, Armando Cambiasso, Javier Tartakovskii, Alexander I. Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance, by depositing them on nanostructured surfaces, where position-dependent strain can be produced on the nanoscale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe<sub>2</sub> placed on photonic nanoantennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nanoantenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe<sub>2</sub> deposited on the nanoantennas of different radii. In agreement with the presented theory, strain up to ≈1.4% is observed for WSe<sub>2</sub> monolayers. We also estimate that >3% strain is achieved in bilayers, accompanied by the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nanoscale parts of the WSe<sub>2</sub> layers, as also predicted by our theoretical model. Our results of direct relevance for both dielectric and plasmonic nanoantennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light–matter interaction in nanophotonic devices. terms-of-use

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