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Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

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GRAF, Alexander, Axel HERGUTH, Giso HAHN, 2019. Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions. SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Melville, New York:AIP Publishing, 140003. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123890

@inproceedings{Graf2019Deter-50355, title={Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions}, year={2019}, doi={10.1063/1.5123890}, number={2147,1}, isbn={978-0-7354-1892-9}, issn={0094-243X}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics}, editor={Poortmans, Jef}, author={Graf, Alexander and Herguth, Axel and Hahn, Giso}, note={Article Number: 140003} }

Herguth, Axel Activation energies for the regeneration of BO-LID differ strongly in literature. Two possible reasons, among others, are suspected to cause this spread in published data. On the one hand, ignoring the injection dependence of the reactions might lead to varying results. On the other hand, the parallel occurrence of LeTID might play a role. While the first reason is eliminated within this contribution by keeping injection constant during the degradation and regeneration treatment, LeTID is indeed found to occur and impact the degradation and regeneration in Cz-Si as can be seen from extracted defect densities and injection-dependent lifetime data. In FZ-Si which is supposed to suffer from LeTID only, activation energy for degradation and regeneration was determined to be E<sub>a,deg</sub> = 0.78 ± 0.09 eV and E<sub>a,reg</sub> = 0.62 ± 0.09 eV independent of firing temperature. For Cz-Si, activation energy of degradation is found to depend slightly on firing temperature, probably due to the superposition of BO-LID with LeTID. Activation energy of regeneration of both, FZ-Si and Cz-Si, is found to be the same within uncertainty. The results furthermore suggest that the superposition of BO-LID and LeTID is not responsible for the broad range of published activation energies. Hahn, Giso 2020-07-23T08:50:31Z eng Graf, Alexander Herguth, Axel Graf, Alexander 2020-07-23T08:50:31Z terms-of-use Hahn, Giso 2019 Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

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