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Ultrathin magnetic oxide EuO films on Si(001) using SiO<sub>x</sub> passivation : Controlled by hard x-ray photoemission spectroscopy

Ultrathin magnetic oxide EuO films on Si(001) using SiOx passivation : Controlled by hard x-ray photoemission spectroscopy

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CASPERS, Christian, Stanley FLADE, Mihaela GORGOI, Andrei GLOSKOVSKII, Wolfgang DRUBE, Claus M. SCHNEIDER, Martina MÜLLER, 2013. Ultrathin magnetic oxide EuO films on Si(001) using SiOx passivation : Controlled by hard x-ray photoemission spectroscopy. In: Journal of Applied Physics. American Institute of Physics (AIP). 113(17), 17C505. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4795010

@article{Caspers2013-05-07Ultra-49700, title={Ultrathin magnetic oxide EuO films on Si(001) using SiOx passivation : Controlled by hard x-ray photoemission spectroscopy}, year={2013}, doi={10.1063/1.4795010}, number={17}, volume={113}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Caspers, Christian and Flade, Stanley and Gorgoi, Mihaela and Gloskovskii, Andrei and Drube, Wolfgang and Schneider, Claus M. and Müller, Martina}, note={Article Number: 17C505} }

Flade, Stanley Müller, Martina Flade, Stanley Müller, Martina 2020-05-28T07:14:14Z Gloskovskii, Andrei Drube, Wolfgang Caspers, Christian Schneider, Claus M. Drube, Wolfgang 2020-05-28T07:14:14Z Caspers, Christian Schneider, Claus M. terms-of-use Gorgoi, Mihaela eng Gorgoi, Mihaela Ultrathin magnetic oxide EuO films on Si(001) using SiO<sub>x</sub> passivation : Controlled by hard x-ray photoemission spectroscopy 2013-05-07 Gloskovskii, Andrei We present the chemical and structural optimization of ultrathin magnetic oxide EuO films on silicon. By applying a controlled in situ passivation of the Si(001) surface with SiO<sub>x</sub> in the monolayer regime, metallic silicide contaminations at the interface can be effectively reduced down to a sub-monolayer coverage, as was carefully quantified by interface-sensitive hard x-ray photoemission spectroscopy. Heteroepitaxial growth of EuO on Si(001) is sustained for this ultrathin SiO<sub>x</sub>-passivation, and bulk-near magnetic properties are observed for the 4 nm-thin EuO films. Our successful combination of chemically and structurally optimized EuO/Si(001) heterostructures by ultrathin in situ SiO<sub>x</sub> passivation makes this system promising for an application as alternative spin functional tunnel contacts in spin-FETs.

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