Photoinduced doping of thin amorphous WO3 films

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BECHINGER, Clemens, Stephan HERMINGHAUS, Paul LEIDERER, 1994. Photoinduced doping of thin amorphous WO3 films. In: Thin Solid Films. 239(1), pp. 156-160. Available under: doi: 10.1016/0040-6090(94)90123-6

@article{Bechinger1994Photo-4960, title={Photoinduced doping of thin amorphous WO3 films}, year={1994}, doi={10.1016/0040-6090(94)90123-6}, number={1}, volume={239}, journal={Thin Solid Films}, pages={156--160}, author={Bechinger, Clemens and Herminghaus, Stephan and Leiderer, Paul} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:bibliographicCitation>First publ. in: Thin Solid Films 239 (1994), 1, pp. 156-160</dcterms:bibliographicCitation> <dc:contributor>Herminghaus, Stephan</dc:contributor> <dspace:hasBitstream rdf:resource=""/> <dcterms:title>Photoinduced doping of thin amorphous WO3 films</dcterms:title> <dc:creator>Leiderer, Paul</dc:creator> <dcterms:issued>1994</dcterms:issued> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Bechinger, Clemens</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <bibo:uri rdf:resource=""/> <dc:creator>Bechinger, Clemens</dc:creator> <dspace:isPartOfCollection rdf:resource=""/> <dcterms:rights rdf:resource=""/> <dcterms:hasPart rdf:resource=""/> <dc:creator>Herminghaus, Stephan</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> <dc:language>eng</dc:language> <dcterms:available rdf:datatype="">2011-03-24T14:51:41Z</dcterms:available> <dc:format>application/pdf</dc:format> <dc:rights>terms-of-use</dc:rights> <dcterms:abstract xml:lang="eng">During exposure of thin amorphous WO3 films to UV light, both the optical absorptivity and the electrical conductivity increase. Using optically excited surface plasmons, we were able to measure even subtle changes of the absorptivity of 10 nm thick films simultaneously with their electrical resistivity at various temperatures. Our measurements show that the temperature dependence and the dependence on the density-of-states of the electrical conductivity in WO3 can be explained by variable-range hopping of charge carriers between optically excited states near the Fermi level. Accordingly UV irradiation of tungsten oxide can be understood in terms of a photoinduced doping process which may have relevance for technical applications.</dcterms:abstract> <dc:date rdf:datatype="">2011-03-24T14:51:41Z</dc:date> </rdf:Description> </rdf:RDF>

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