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Harnessing exciton-exciton annihilation in two-dimensional semiconductors

Harnessing exciton-exciton annihilation in two-dimensional semiconductors

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LINARDY, Eric, Dinesh YADAV, Daniele VELLA, Ivan A. VERZHBITSKIY, Kenji WATANABE, Takashi TANIGUCHI, Fabian PAULY, Maxim TRUSHIN, Goki EDA, 2020. Harnessing exciton-exciton annihilation in two-dimensional semiconductors. In: Nano letters. American Chemical Society (ACS). 20(3), pp. 1647-1653. ISSN 1530-6984. eISSN 1530-6992. Available under: doi: 10.1021/acs.nanolett.9b04756

@article{Linardy2020-03-11Harne-48829, title={Harnessing exciton-exciton annihilation in two-dimensional semiconductors}, year={2020}, doi={10.1021/acs.nanolett.9b04756}, number={3}, volume={20}, issn={1530-6984}, journal={Nano letters}, pages={1647--1653}, author={Linardy, Eric and Yadav, Dinesh and Vella, Daniele and Verzhbitskiy, Ivan A. and Watanabe, Kenji and Taniguchi, Takashi and Pauly, Fabian and Trushin, Maxim and Eda, Goki} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/48829"> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:contributor>Linardy, Eric</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-02-26T11:48:43Z</dcterms:available> <dc:creator>Verzhbitskiy, Ivan A.</dc:creator> <dc:creator>Trushin, Maxim</dc:creator> <dcterms:issued>2020-03-11</dcterms:issued> <dc:contributor>Trushin, Maxim</dc:contributor> <dcterms:title>Harnessing exciton-exciton annihilation in two-dimensional semiconductors</dcterms:title> <dc:rights>terms-of-use</dc:rights> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-02-26T11:48:43Z</dc:date> <dc:contributor>Verzhbitskiy, Ivan A.</dc:contributor> <dc:contributor>Pauly, Fabian</dc:contributor> <dc:contributor>Yadav, Dinesh</dc:contributor> <dc:contributor>Watanabe, Kenji</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Linardy, Eric</dc:creator> <dc:creator>Taniguchi, Takashi</dc:creator> <dc:creator>Pauly, Fabian</dc:creator> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/48829"/> <dcterms:abstract xml:lang="eng">Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in generation of unbound high energy carriers. Here, we report unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photo-excited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab-initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.</dcterms:abstract> <dc:creator>Watanabe, Kenji</dc:creator> <dc:creator>Eda, Goki</dc:creator> <dc:contributor>Eda, Goki</dc:contributor> <dc:contributor>Taniguchi, Takashi</dc:contributor> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Vella, Daniele</dc:contributor> <dc:creator>Yadav, Dinesh</dc:creator> <dc:creator>Vella, Daniele</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

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