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A model for phosphosilicate glass deposition via POCl<sub>3</sub> for control of phosphorus dose in Si

A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si

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CHEN, Renyu, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Michael KESSLER, Zihua ZHU, Vaithiyalingam SHUTTHANANDAN, Pietro P. ALTERMATT, Scott T. DUNHAM, 2012. A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si. In: Journal of Applied Physics. American Institute of Physics (AIP). 112(12), 124912. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4771672

@article{Chen2012-12-15model-48598, title={A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si}, year={2012}, doi={10.1063/1.4771672}, number={12}, volume={112}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Chen, Renyu and Wagner, Hannes and Dastgheib-Shirazi, Amir and Kessler, Michael and Zhu, Zihua and Shutthanandan, Vaithiyalingam and Altermatt, Pietro P. and Dunham, Scott T.}, note={Article Number: 124912} }

Altermatt, Pietro P. Dastgheib-Shirazi, Amir Kessler, Michael Zhu, Zihua Dastgheib-Shirazi, Amir Chen, Renyu Altermatt, Pietro P. Zhu, Zihua Chen, Renyu Dunham, Scott T. 2020-02-12T07:54:15Z 2020-02-12T07:54:15Z A model for phosphosilicate glass deposition via POCl<sub>3</sub> for control of phosphorus dose in Si Kessler, Michael Shutthanandan, Vaithiyalingam Shutthanandan, Vaithiyalingam eng Wagner, Hannes Effective control of the dose of diffused phosphorus emitter profiles is crucial for optimization of crystalline silicon solar cells, but it requires detailed understanding of the POCl<sub>3</sub> doping process. We measure concentration profiles within the deposited phosphosilicate glass (PSG) layer for a range of POCl<sub>3</sub> doping conditions and find that (i) its composition is nearly independent of process conditions and (ii) it is separated from Si by a thin SiO<sub>2</sub> layer. We also find strong accumulation of P at the SiO<sub>2</sub>-Si interface. As common linear-parabolic models cannot fully explain the observed kinetics of PSG thickness and phosphorus dose in Si, we present an improved model including oxygen depletion and dose saturation, giving a better explanation of the experimental data. In contrast to previous models that adjust the peak phosphorus concentration at the Si surface to match the measured profiles, our models accurately predict the time-dependent dose behavior under different experimental conditions. We further couple this growth model with previously reported phosphorus diffusion and deactivation models in silicon, providing full modeling of the POCl<sub>3</sub> doping process. Wagner, Hannes Dunham, Scott T. 2012-12-15

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