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Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers

Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers

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MÖRTTER, Matthias Bernd, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2019. Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 040013. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123840

@inproceedings{Mortter2019Inves-46843, title={Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers}, year={2019}, doi={10.1063/1.5123840}, number={2147,1}, isbn={978-0-7354-1892-9}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium}, editor={Poortmans, Jef}, author={Mörtter, Matthias Bernd and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 040013} }

2019 2019-09-12T11:35:46Z Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers Engelhardt, Josh Mörtter, Matthias Bernd Terheiden, Barbara 2019-09-12T11:35:46Z Hahn, Giso Terheiden, Barbara Hahn, Giso eng Mörtter, Matthias Bernd terms-of-use Engelhardt, Josh In this study, the contact formation to a p<sup>+</sup>-doped emitter created by laser irradiation is investigated. We examine the influence of different firing temperatures and paste compositions on the contact formation on Si substrates after laser treatment of the Si surface. Commercially available AgAl and Ag pastes are screen-printed on the Si wafers. The formed contacts show low contact resistivity ≤2 mΩcm<sup>2</sup> for both pastes within the investigated firing temperature ranges. Furthermore, top view investigations of the formed contacts by electron scanning microscopy revealed: for the AgAl containing paste typical AgAl spikes grow into the Si surface; for the Al-free Ag paste small Ag crystallites grow. In addition, a new structure is observed on the contact surface. Using energy dispersive X-ray spectroscopy, Ag as an incorporated part of this structure has been identified. This structure can be considered as an AgSi alloy, covering most of the contact surface. This potentially explains the low contact resistivity values in case of the Ag paste.

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