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Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si

Etch Pit Density Reduction in POCl3 and APCVD Gettered mc‐Si

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FLECK, Martin, Annika ZUSCHLAG, Giso HAHN, 2019. Etch Pit Density Reduction in POCl3 and APCVD Gettered mc‐Si. In: Physica Status Solidi (A) - Applications and Materials Science. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.201900316

@article{Fleck2019-07-08Densi-46275, title={Etch Pit Density Reduction in POCl3 and APCVD Gettered mc‐Si}, year={2019}, doi={10.1002/pssa.201900316}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Fleck, Martin and Zuschlag, Annika and Hahn, Giso} }

Zuschlag, Annika 2019-07-09T15:04:05Z Herein, the effects of gettering, temperature, dopant concentration, and metal contamination on the etch pit density (EPD) of an mc‐Si material are studied. It is demonstrated that there is a reduction of EPD after gettering that is independent for varying etchants, thereby confirming the physical nature of this effect. The EPD analysis of wafers that are gettered on one wafer side, results in different EPD values for the two wafer sides. This finding constrains the possibilities for mechanisms of EPD reduction. The combined evidence of the experiments presented here supports the hypothesis that EPD reduction happens because the defect etching process for impurity‐lean dislocations is different from dislocations decorated with impurities. 2019-07-09T15:04:05Z Zuschlag, Annika Fleck, Martin 2019-07-08 Hahn, Giso eng Fleck, Martin Hahn, Giso Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si

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