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Well passivating and highly temperature stable aluminium oxide desposited by atmosphere pressure chemical vapor deposition for PERC and PERT solar cell concepts

Well passivating and highly temperature stable aluminium oxide desposited by atmosphere pressure chemical vapor deposition for PERC and PERT solar cell concepts

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ENGELHARDT, Josh, Benjamin GAPP, Florian MUTTER, Giso HAHN, Barbara TERHEIDEN, 2018. Well passivating and highly temperature stable aluminium oxide desposited by atmosphere pressure chemical vapor deposition for PERC and PERT solar cell concepts. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, Sep 24, 2018 - Sep 28, 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München:WIP, pp. 390-394. ISBN 978-3-936338-50-8. Available under: doi: 10.4229/35thEUPVSEC20182018-2BO.4.4

@inproceedings{Engelhardt2018passi-45204, title={Well passivating and highly temperature stable aluminium oxide desposited by atmosphere pressure chemical vapor deposition for PERC and PERT solar cell concepts}, year={2018}, doi={10.4229/35thEUPVSEC20182018-2BO.4.4}, isbn={978-3-936338-50-8}, address={München}, publisher={WIP}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={390--394}, editor={Verlinden, Pierre}, author={Engelhardt, Josh and Gapp, Benjamin and Mutter, Florian and Hahn, Giso and Terheiden, Barbara} }

Engelhardt, Josh Hahn, Giso Mutter, Florian Terheiden, Barbara Engelhardt, Josh 2018 2019-02-25T13:07:27Z Well passivating and highly temperature stable aluminium oxide desposited by atmosphere pressure chemical vapor deposition for PERC and PERT solar cell concepts Gapp, Benjamin 2019-02-25T13:07:27Z terms-of-use Mutter, Florian Terheiden, Barbara eng Atmospheric pressure chemical vapor deposited aluminum oxide films based on trimethyl-aluminum and oxygen as precursors reaching a surface passivation quality comparable to atomic layer deposited aluminum oxide layers are presented. Demonstrated are charge carrier lifetime values up to 8 ms on n-type Cz-Si for fired AlOx/SiNx:H passivation stacks, common to PERC and PERT solar cell designs. The APCVD AlOx layers are highly temperature stable for set peak firing temperatures in the range of 700-920°C allowing for surface recombination velocities < 2 cms- 1. The influence of temperature during AlOx deposition in the APCVD tool is investigated concerning Si material and fundamental passivation effect properties. The latter are investigated in comparison to ALD AlOx determining the underlying causes for higher lifetime after firing for APCVD AlOx films. Gapp, Benjamin Hahn, Giso

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