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Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks

Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks

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SPERBER, David, Anton SCHWARZ, Axel HERGUTH, Giso HAHN, 2018. Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks. In: Physica Status Solidi (A) - Applications and Materials Science. 215(24), 1800741. ISSN 1862-6319. eISSN 1862-6300. Available under: doi: 10.1002/pssa.201800741

@article{Sperber2018-12Surfa-44658, title={Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks}, year={2018}, doi={10.1002/pssa.201800741}, number={24}, volume={215}, issn={1862-6319}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Sperber, David and Schwarz, Anton and Herguth, Axel and Hahn, Giso}, note={Article Number: 1800741} }

Hahn, Giso Sperber, David 2019-01-22T10:57:42Z Sperber, David Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks 2019-01-22T10:57:42Z Schwarz, Anton Hahn, Giso Herguth, Axel Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effective excess charge carrier lifetime in lifetime samples made of Czochralski silicon during illuminated treatment at 80–150°C. Samples are passivated with either AlO<sub>x</sub>:H/SiO<sub>x</sub>N<sub>y</sub>:H/SiN<sub>x</sub>:H or SiO<sub>x</sub>N<sub>y</sub>:H/SiN<sub>x</sub>:H stacks stemming entirely from plasma-enhanced chemical vapor deposition. Samples show strong variations in BRD depending on passivation stacks and treatment conditions, and a potential link to light and elevated temperature‐induced degradation (LeTID) is discussed. All samples are fired in a belt furnace, and variations of firing temperature and belt speed are shown to influence SRD slightly. SRD is furthermore accelerated with increasing treatment temperature and an apparent activation energy E<sub>app</sub>=1.07±0.02eV is determined in SiO<sub>x</sub>N<sub>y:</sub>H/SiN<sub>x</sub>:H passivated samples. Interpretation of E<sub>app</sub> is, however, difficult as both changes in interfacial defect and fixed charge density occur in parallel during SRD. eng Herguth, Axel 2018-12 Schwarz, Anton

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