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Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

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STEFFENS, Jonathan, Giso HAHN, Barbara TERHEIDEN, 2018. Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christopher, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY:AIP Publishing, 020021. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260

@inproceedings{Steffens2018Towar-43619, title={Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES}, year={2018}, doi={10.1063/1.5049260}, number={1999,1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, address={Melville, NY}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christopher}, author={Steffens, Jonathan and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 020021} }

Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES Steffens, Jonathan Hahn, Giso 2018-10-25T12:58:16Z In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H<sub>2</sub>O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations. 2018-10-25T12:58:16Z 2018 Hahn, Giso terms-of-use Terheiden, Barbara eng Steffens, Jonathan Terheiden, Barbara

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