On the characteristics of the doping profile under local metal contacts

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MICARD, Gabriel, Giso HAHN, Barbara TERHEIDEN, 2018. On the characteristics of the doping profile under local metal contacts. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. Mär 2018 - 21. Mär 2018. In: BALLIF, Christopher, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY:AIP Publishing, 020019. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258

@inproceedings{Micard2018chara-43618, title={On the characteristics of the doping profile under local metal contacts}, year={2018}, doi={10.1063/1.5049258}, number={1999,1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, address={Melville, NY}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christopher}, author={Micard, Gabriel and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 020019} }

In many solar cell concepts, the recombination at local contacts is a bottleneck for the efficiency. Therefore, an optimized doping profile underneath the metal contact would improve the cell performance. We investigate the saturation current density (J<sub>0e,met</sub>) value of various doping profiles by TCAD simulation and showed that lowest J<sub>0e,met</sub> values are obtained for profiles with a surface concentration N<sub>s</sub> > 5·10<sup>20</sup> cm<sup>−3</sup> as a consequence of the Pauli blocking and almost independently of the junction depth x<sub>j</sub>. For profiles with lower N<sub>s</sub> we could show an approximate proportionality between J<sub>0e,met</sub> and the sheet resistance (R<sub>sheet</sub>) making the recombination performance of these profiles quasi-independent of the profile shape. Therefore, profiles with even lower value of R<sub>sheet</sub> as presently used, typically <10 Ω/sqr while keeping an N<sub>s</sub> > 10<sup>20</sup> cm<sup>−3</sup> could allow to reach even lower J<sub>0e,met</sub>, typically <100 fA/cm<sup>2</sup>. In general Auger recombination is very low (< 10 fA/cm<sup>2</sup> for R<sub>sheet</sub> > 5 Ω/sqr) and does not play a role in the optimal profile shape of the emitter. 2018-10-25T12:53:41Z 2018-10-25T12:53:41Z 2018 On the characteristics of the doping profile under local metal contacts Terheiden, Barbara eng Terheiden, Barbara Hahn, Giso Hahn, Giso terms-of-use Micard, Gabriel Micard, Gabriel

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