KOPS - The Institutional Repository of the University of Konstanz

Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon

Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon

Cite This

Files in this item

Checksum: MD5:29feb29639bdce794ad2506ae0268e62

GRAF, Alexander, Axel HERGUTH, Giso HAHN, 2018. Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon. In: AIP Advances. 8(8), 085219. eISSN 2158-3226. Available under: doi: 10.1063/1.5047084

@article{Graf2018-08Inves-43358, title={Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon}, year={2018}, doi={10.1063/1.5047084}, number={8}, volume={8}, journal={AIP Advances}, author={Graf, Alexander and Herguth, Axel and Hahn, Giso}, note={Article Number: 085219} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/43358"> <dc:creator>Graf, Alexander</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:creator>Hahn, Giso</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-09-21T09:50:46Z</dcterms:available> <dcterms:abstract xml:lang="eng">Boron-oxygen related light-induced degradation (BO-LID) of effective charge carrier lifetime is one of the major problems for photovoltaics based on oxygen-rich boron-doped wafer substrates. Within this contribution, the dependence of slow BO-related degradation rate on total hole concentration at 30°C is investigated. A widened high power 805 nm IR-laser is used to reach injection levels comparable with the doping level of the used 2 Ωcm material thus significantly impacting total hole concentration. It is found that slow BO-related degradation rate scales almost quadratically with total hole concentration in best agreement with results from other groups suggesting the involvement of two holes in the slow BO-related degradation mechanism.</dcterms:abstract> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Herguth, Axel</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:issued>2018-08</dcterms:issued> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-09-21T09:50:46Z</dc:date> <dcterms:title>Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon</dcterms:title> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43358/1/Graf_2-1s0pdjkx0q21d2.pdf"/> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:contributor>Hahn, Giso</dc:contributor> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43358/1/Graf_2-1s0pdjkx0q21d2.pdf"/> <dc:contributor>Graf, Alexander</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/43358"/> </rdf:Description> </rdf:RDF>

Downloads since Sep 21, 2018 (Information about access statistics)

Graf_2-1s0pdjkx0q21d2.pdf 104

This item appears in the following Collection(s)

Search KOPS


Browse

My Account