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On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si

On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si

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SPERBER, David, Axel HERGUTH, Giso HAHN, 2018. On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si. In: Solar Energy Materials and Solar Cells. 185, pp. 277-282. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.05.031

@article{Sperber2018-10impro-42905, title={On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si}, year={2018}, doi={10.1016/j.solmat.2018.05.031}, volume={185}, issn={0927-0248}, journal={Solar Energy Materials and Solar Cells}, pages={277--282}, author={Sperber, David and Herguth, Axel and Hahn, Giso} }

Sperber, David 2018-07-25T06:08:34Z Herguth, Axel Herguth, Axel On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si eng 2018-07-25T06:08:34Z Hahn, Giso Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiN<sub>x</sub>:H and AlO<sub>x</sub>:H/SiN<sub>x</sub>:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment. 2018-10 Sperber, David Hahn, Giso

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