Growth and electronic structure of graphene on semiconducting Ge(110)

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TESCH, Julia, Elena VOLOSHINA, Mikhail FONIN, Yuriy S. DEDKOV, 2017. Growth and electronic structure of graphene on semiconducting Ge(110). In: Carbon. 122, pp. 428-433. ISSN 0008-6223. eISSN 1873-3891

@article{Tesch2017-05-22T12:54:36ZGrowt-39570, title={Growth and electronic structure of graphene on semiconducting Ge(110)}, year={2017}, doi={10.1016/j.carbon.2017.06.079}, volume={122}, issn={0008-6223}, journal={Carbon}, pages={428--433}, author={Tesch, Julia and Voloshina, Elena and Fonin, Mikhail and Dedkov, Yuriy S.} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/39570"> <dcterms:title>Growth and electronic structure of graphene on semiconducting Ge(110)</dcterms:title> <dc:creator>Fonin, Mikhail</dc:creator> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/39570"/> <dc:contributor>Fonin, Mikhail</dc:contributor> <dc:creator>Dedkov, Yuriy S.</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-07-13T09:46:53Z</dc:date> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-07-13T09:46:53Z</dcterms:available> <dcterms:issued>2017-05-22T12:54:36Z</dcterms:issued> <dcterms:abstract xml:lang="eng">The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.</dcterms:abstract> <dc:creator>Voloshina, Elena</dc:creator> <dc:contributor>Tesch, Julia</dc:contributor> <dc:contributor>Dedkov, Yuriy S.</dc:contributor> <dc:language>eng</dc:language> <dcterms:rights rdf:resource="http://nbn-resolving.de/urn:nbn:de:bsz:352-20150914100631302-4485392-8"/> <dc:creator>Tesch, Julia</dc:creator> <dc:contributor>Voloshina, Elena</dc:contributor> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 13.07.2017 (Informationen über die Zugriffsstatistik)

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