Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

Cite This

Files in this item

Checksum: MD5:d8a602ad41a1132cb2e6c0d0c7574c61

TERHEIDEN, Barbara, Jan HENSEN, Andreas WOLF, Renate HORBELT, Heiko PLAGWITZ, Rolf BRENDEL, 2011. Layer Transfer from Chemically Etched 150 mm Porous Si Substrates. In: Materials. 4(5), pp. 941-952. eISSN 1996-1944. Available under: doi: 10.3390/ma4050941

@article{Terheiden2011Layer-31559, title={Layer Transfer from Chemically Etched 150 mm Porous Si Substrates}, year={2011}, doi={10.3390/ma4050941}, number={5}, volume={4}, journal={Materials}, pages={941--952}, author={Terheiden, Barbara and Hensen, Jan and Wolf, Andreas and Horbelt, Renate and Plagwitz, Heiko and Brendel, Rolf} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/31559"> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:rights>terms-of-use</dc:rights> <dc:creator>Horbelt, Renate</dc:creator> <dc:contributor>Brendel, Rolf</dc:contributor> <dc:contributor>Wolf, Andreas</dc:contributor> <dcterms:abstract xml:lang="eng">We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etching process uses an aqueous HF-rich HF/HNO3 solution. The porosity increases with increasing doping concentration of the Si substrate wafer and with increasing porous layer thickness. In contrast to the electrochemically etched double layers, the porosity profile of the stain etched substrates is highest at the original wafer surface and lowest at the interface between the porous layer and the Si bulk. The epitaxy process is adapted to the high porosity at the surface with regard to the reorganization of the porous layer.</dcterms:abstract> <dc:contributor>Horbelt, Renate</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-08-13T11:21:40Z</dc:date> <dcterms:rights rdf:resource="https://kops.uni-konstanz.de/page/termsofuse"/> <dcterms:title>Layer Transfer from Chemically Etched 150 mm Porous Si Substrates</dcterms:title> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/31559/1/Terheiden_0-298304.pdf"/> <dc:creator>Brendel, Rolf</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Plagwitz, Heiko</dc:contributor> <dcterms:issued>2011</dcterms:issued> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/31559"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Plagwitz, Heiko</dc:creator> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Hensen, Jan</dc:creator> <dc:creator>Wolf, Andreas</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/31559/1/Terheiden_0-298304.pdf"/> <dc:contributor>Hensen, Jan</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-08-13T11:21:40Z</dcterms:available> </rdf:Description> </rdf:RDF>

Downloads since Aug 13, 2015 (Information about access statistics)

Terheiden_0-298304.pdf 302

This item appears in the following Collection(s)

Search KOPS


Browse

My Account