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Valley degeneracy breaking by magnetic field in monolayer MoSe<sub>2</sub>

Valley degeneracy breaking by magnetic field in monolayer MoSe2

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MACNEILL, David, Colin HEIKES, Kin Fai MAK, Anderson ZACHARY, Andor KORMANYOS, Viktor ZOLYOMI, Jiwoong PARK, Daniel C. RALPH, 2014. Valley degeneracy breaking by magnetic field in monolayer MoSe2

@unpublished{MacNeill2014Valle-29851, title={Valley degeneracy breaking by magnetic field in monolayer MoSe2}, year={2014}, author={MacNeill, David and Heikes, Colin and Mak, Kin Fai and Zachary, Anderson and Kormanyos, Andor and Zolyomi, Viktor and Park, Jiwoong and Ralph, Daniel C.} }

Zolyomi, Viktor Mak, Kin Fai Zachary, Anderson 2015-02-18T10:25:42Z Park, Jiwoong Heikes, Colin Kormanyos, Andor Ralph, Daniel C. MacNeill, David Zachary, Anderson MacNeill, David Valley degeneracy breaking by magnetic field in monolayer MoSe<sub>2</sub> Kormanyos, Andor 2015-02-18T10:25:42Z Ralph, Daniel C. 2014 Park, Jiwoong Heikes, Colin eng Zolyomi, Viktor Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe<sub>2 </sub>devices. We observe a linear splitting of −0.22meV/T between luminescence peak energies in σ<sub>+</sub> and σ<sub>−</sub> emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe<sub>2</sub> couple photon handedness to the exciton valley degree of freedom, so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with magnetic field, to a degree that depends on the back-gate voltage. An applied magnetic field therefore provides effective strategies for control over the valley degree of freedom. Mak, Kin Fai

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