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Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon

Effects of process conditions for the n+-emitter formation in crystalline silicon

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DASTGHEIB-SHIRAZI, Amir, Michael STEYER, Gabriel MICARD, Hannes WAGNER, Pietro ALTERMATT, Giso HAHN, 2012. Effects of process conditions for the n+-emitter formation in crystalline silicon. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, Jun 3, 2012 - Jun 8, 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, pp. 001584-001589. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317897

@inproceedings{DastgheibShirazi2012-06Effec-22495, title={Effects of process conditions for the n+-emitter formation in crystalline silicon}, year={2012}, doi={10.1109/PVSC.2012.6317897}, isbn={978-1-4673-0064-3}, publisher={IEEE}, booktitle={2012 38th IEEE Photovoltaic Specialists Conference}, pages={001584--001589}, author={Dastgheib-Shirazi, Amir and Steyer, Michael and Micard, Gabriel and Wagner, Hannes and Altermatt, Pietro and Hahn, Giso} }

Altermatt, Pietro Micard, Gabriel 2013-03-28T12:56:37Z Hahn, Giso Wagner, Hannes 2012-06 2013-03-28T12:56:37Z Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon Hahn, Giso Micard, Gabriel Steyer, Michael Steyer, Michael eng Wagner, Hannes Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl<sub>3</sub> diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures. Dastgheib-Shirazi, Amir Altermatt, Pietro 38th IEEE Photovoltaic Specialists Conference (PVSC) 2012 : Austin, Texas, USA, 3 - 8 June 2012 / [IEEE Electron Devices Society]. - Piscataway, NJ : IEEE, 2012. - S. 1584-1589. - ISBN 978-1-467-30064-3 terms-of-use Dastgheib-Shirazi, Amir

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