Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs

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YANG, Kajian, Dirk HEINECKE, Jonna PAAJASTE, Christoph KÖLBL, Thomas DEKORSY, Soile SUOMALAINEN, Mircea GUINA, 2013. Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs. In: Optics Express. 21(4), pp. 4311-4318. eISSN 1094-4087. Available under: doi: 10.1364/OE.21.004311

@article{Yang2013-02-25Model-22491, title={Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs}, year={2013}, doi={10.1364/OE.21.004311}, number={4}, volume={21}, journal={Optics Express}, pages={4311--4318}, author={Yang, Kajian and Heinecke, Dirk and Paajaste, Jonna and Kölbl, Christoph and Dekorsy, Thomas and Suomalainen, Soile and Guina, Mircea} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:bibliographicCitation>Optics Express ; 21 (2013), 4. - S. 4311-4318</dcterms:bibliographicCitation> <dc:contributor>Yang, Kajian</dc:contributor> <dc:creator>Guina, Mircea</dc:creator> <dc:creator>Yang, Kajian</dc:creator> <dc:contributor>Heinecke, Dirk</dc:contributor> <dc:contributor>Kölbl, Christoph</dc:contributor> <dc:contributor>Guina, Mircea</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <dcterms:rights rdf:resource=""/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Suomalainen, Soile</dc:contributor> <dcterms:available rdf:datatype="">2013-04-24T08:31:56Z</dcterms:available> <dc:rights>terms-of-use</dc:rights> <dc:creator>Paajaste, Jonna</dc:creator> <dc:creator>Suomalainen, Soile</dc:creator> <dcterms:hasPart rdf:resource=""/> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dcterms:title>Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs</dcterms:title> <dcterms:alternative>Modenkopplung in einem 2µm Tm,Ho:YAG-Lasers mit GaInAs- und GaSb-basierenden SESAMs</dcterms:alternative> <dc:date rdf:datatype="">2013-04-24T08:31:56Z</dc:date> <dc:creator>Dekorsy, Thomas</dc:creator> <dspace:isPartOfCollection rdf:resource=""/> <dcterms:issued>2013-02-25</dcterms:issued> <dc:creator>Kölbl, Christoph</dc:creator> <dspace:hasBitstream rdf:resource=""/> <bibo:uri rdf:resource=""/> <dcterms:abstract xml:lang="eng">We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.</dcterms:abstract> <dc:contributor>Paajaste, Jonna</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Heinecke, Dirk</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> </rdf:Description> </rdf:RDF>

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