KOPS - Das Institutionelle Repositorium der Universität Konstanz

Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer

Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:18ae556df93e1719c0549092011bd178

KNEIER, Fabian, Tobias GELDHAUSER, Elke SCHEER, Paul LEIDERER, Johannes BONEBERG, 2012. Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer. In: Applied Physics A. 110(2), pp. 321-327. ISSN 0947-8396. eISSN 1432-0630

@article{Kneier2012Nanos-20741, title={Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer}, year={2012}, doi={10.1007/s00339-012-7235-5}, number={2}, volume={110}, issn={0947-8396}, journal={Applied Physics A}, pages={321--327}, author={Kneier, Fabian and Geldhauser, Tobias and Scheer, Elke and Leiderer, Paul and Boneberg, Johannes} }

2012 Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer Geldhauser, Tobias 2013-01-25T10:16:38Z eng Boneberg, Johannes 2013-01-25T10:16:38Z Applied Physics : A, Materials science & processing ; 110 (2013), 2. - S. 321-327 The vertical movement of a 40 nm thin Au film on a silicon substrate during intense nanosecond (ns) laser irradiation is determined on the nm vertical and ns time scales using an optimized Michelson interferometer. The balanced setup with two detectors uses the inverse interference signal and accounts for transient reflectivity changes during irradiation. We show that a change in phase shift upon reflection must be taken into account to gain quantitative results. Three distinct fluence regimes can be distinguished, characterized by transient reflectivity behavior, dewetting processes and film detachment. Maximum displacement velocities are determined to be 0.6 m s and 1.9 ms below and above the melting threshold of the metal, respectively. Flight velocities of detaching liquid lms are found to be between 30 and 70 ms for many nanoseconds. Leiderer, Paul Scheer, Elke Geldhauser, Tobias Kneier, Fabian deposit-license Boneberg, Johannes Leiderer, Paul Scheer, Elke Kneier, Fabian

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

kneier_207413.pdf 119

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto