Type of Publication: | Contribution to a conference |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-192048 |
Author: | Karzel, Philipp; Frey, Alexander; Fritz, Susanne; Hahn, Giso |
Year of publication: | 2011 |
Conference: | 26th European Photovoltaic Solar Energy Conference and Exhibition, Sep 5, 2011 - Sep 9, 2011, Hamburg, Germany |
Published in: | Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector / Ossenbrink, H. et al. (ed.). - Munich, Germany : WIP-Renewable Energies, 2011. - pp. 909-913. - ISBN 3-936338-27-2 |
DOI (citable link): | https://dx.doi.org/10.4229/26thEUPVSEC2011-2BO.5.4 |
Summary: |
The purpose of this work is to investigate the influence of in-diffusing atomic H into a multicrystalline silicon (mc-Si) wafer on the concentration of interstitial iron (Fei). Vertically adjacent wafers were annealed with and without in-diffusing H. In-diffusion was realized by exposing the samples to a microwave induced remote hydrogen plasma (MIRHP). [Fei] was detected based on lifetime measurements before and after dissociating the FeB complex. Surface passivation was achieved by a quinhydrone-methanol solution to avoid further temperature steps and indiffusion of H during passivation. From [Fei] measurements before and after the annealing steps with and without H, the influence of H alone on [Fei] could be accessed. The results were compared to experiments where SiNx:H layers were used as surface passivation for [Fei] measurements after low temperature anneals (300°C – 500°C). It could be shown that a H plasma atmosphere has a strong additional effect on the reduction of [Fei] compared to temperature effects alone. This additional reduction is proportional to the [Fei] after the annealing step alone.
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Subject (DDC): | 530 Physics |
Keywords: | gettering, iron, hydrogen, mc-Si |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
KARZEL, Philipp, Alexander FREY, Susanne FRITZ, Giso HAHN, 2011. Influence of hydrogen on interstitial iron concentration in multicrystalline silicon. 26th European Photovoltaic Solar Energy Conference and Exhibition. Hamburg, Germany, Sep 5, 2011 - Sep 9, 2011. In: OSSENBRINK, H., ed. and others. Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector. Munich, Germany:WIP-Renewable Energies, pp. 909-913. ISBN 3-936338-27-2. Available under: doi: 10.4229/26thEUPVSEC2011-2BO.5.4
@inproceedings{Karzel2011Influ-19204, title={Influence of hydrogen on interstitial iron concentration in multicrystalline silicon}, year={2011}, doi={10.4229/26thEUPVSEC2011-2BO.5.4}, isbn={3-936338-27-2}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition : the most inspiring platform for the global PV solar sector}, pages={909--913}, editor={Ossenbrink, H.}, author={Karzel, Philipp and Frey, Alexander and Fritz, Susanne and Hahn, Giso} }
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