KOPS - The Institutional Repository of the University of Konstanz

Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces

Cite This

Files in this item

Files Size Format View

There are no files associated with this item.

GLOGER, Sebastian, Nils BRINKMANN, Barbara TERHEIDEN, 2011. Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces. In: Energy Procedia. 8, pp. 666-671. ISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2011.06.199

@article{Gloger2011Surfa-17689, title={Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces}, year={2011}, doi={10.1016/j.egypro.2011.06.199}, volume={8}, issn={1876-6102}, journal={Energy Procedia}, pages={666--671}, author={Gloger, Sebastian and Brinkmann, Nils and Terheiden, Barbara} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/17689"> <dc:contributor>Gloger, Sebastian</dc:contributor> <dc:contributor>Brinkmann, Nils</dc:contributor> <dcterms:bibliographicCitation>Publ. in: Engergy procedia ; 8 (2011), . - S. 666-671</dcterms:bibliographicCitation> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-02-01T11:30:50Z</dc:date> <dc:creator>Brinkmann, Nils</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Terheiden, Barbara</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:rights>terms-of-use</dc:rights> <dcterms:title>Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces</dcterms:title> <dcterms:abstract xml:lang="eng">The surface passivation ability of a hydrogenated amorphous silicon (a-Si:H) layer is investigated on industrial-type cleaned p-type (2 Ωcm) FZ and Cz silicon wafers. The cleaning sequence consists of laser/saw damage removal and immersions in aqueous HCl and HF solutions. After this cleaning an effective surface recombination velocity Seff of 1.0 cm/s is achieved with a deposited and annealed a-Si:H-layer. No RCA or similar elaborate cleaning steps are needed to achieve this low surface recombination velocity. After a firing step in a belt furnace at a wafer temperature of up to 670 °C the passivation ability of the a-Si:H layer is fully restored during hydrogen annealing. It is shown that the amount of silicon hydrogen bonds in the a-Si:H layer is correlated to the degradation and recovery of the passivation quality of the a-Si:H layer.</dcterms:abstract> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2012-02-01T11:30:50Z</dcterms:available> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/17689"/> <dcterms:issued>2011</dcterms:issued> <dc:creator>Gloger, Sebastian</dc:creator> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Terheiden, Barbara</dc:creator> </rdf:Description> </rdf:RDF>

This item appears in the following Collection(s)

Search KOPS


Browse

My Account